2n7000 Schaltung. The bs170 has the source and drain leads interchanged. 2n7000 semiconductor n channel enhancement mode technical data field effect transistor interface and switching application b c features high density cell design for low rds on.
2n7000 schaltung ein steckbrett versuch mit der 2n7000 überprüft ob ein momentaner druck auf die taktile schalter mit einem 100 µf elektrolytische mit 3 9 mohm über das tor das messgerät für etwa 10 minuten parallel bevor das batteriesymbol erschien am. N channel enhancement mode field effect transistor. 2n7000 d 2n7000g small signal mosfet 200 mamps 60 volts n channel to 92 features aec qualified ppap capable this is a pb free device maximum ratings rating symbol value unit drain source voltage vdss 60 vdc drain gate voltage rgs 1 0 m vdgr 60 vdc gate source voltage continuous non repetitive tp 50 s.
2n7000 semiconductor n channel enhancement mode technical data field effect transistor interface and switching application b c features high density cell design for low rds on.
Request fairchild semiconductor 2n7000. Mosfet n ch 60v 200ma to 92 online from elcodis view and download 2n7000 pdf datasheet mosfets ganfets single specifications. N channel enhancement mode field effect transistor. Simple wiring instruction for controlling power to devices from a micro controller using a logic level n channel mosfet using a p channel mosfet https www.
